| 摘要 |
<p>The method involves implanting ions of a doped material with a large diffusion coefficients in a semiconductor and irradiating multiple pulsed laser radiation using multiple laser irradiation devices during activating a doped layer, in which the doped material is implanted, on a single doped layer or successive layers. The successive layers are formed from multiple doped layers with the same conductor type or with different conductor type.</p> |
