发明名称 |
High speed low power magnetic devices based on current induced spin-momentum transfer |
摘要 |
A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity and/or magnetization direction. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer. The fixed and free magnetic layers may have magnetization directions at a substantially non-zero angle relative to the layer normal. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to read out the information stored in the device. |
申请公布号 |
EP2863434(A2) |
申请公布日期 |
2015.04.22 |
申请号 |
EP20140198308 |
申请日期 |
2010.06.21 |
申请人 |
NEW YORK UNIVERSITY |
发明人 |
KENT, ANDREW;STEIN, DANIEL;BEAUJOUR, JEAN-MARC |
分类号 |
H01L27/115;G11C11/16;G11C11/56;H01L21/8247;H01L27/10 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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