MEMRISTORS AND METHODS OF FABRICATION

摘要

Memristors and their fabrication are provided. A first dielectric layer is formed over one or more conductive pathways. Vias are formed in the dielectric layer and filled with conductive material. A second dielectric layer is formed there over, and vias are formed aligned with and extending to the filled vias. A reactant fluid is introduced into the vias such that a reacted portion of the conductive material is defined within the filled vias. The vias in the second dielectric layer are then filled with conductive material such that memristors are defined. Conductive pathways are then formed over and in contact with the memristors such that each is individually addressable.