| 摘要 |
<p>There is provided a semiconductor device, comprising a substrate (2), a first electrode (9) disposed on a circumferential region of a surface of the substrate (2), a first wiring (4a) disposed on the substrate (2) and connected to the first electrode (9), a first resin layer (3) disposed on the first wiring (4a) and including a via hole (11), a second wiring (4b) disposed on the first insulating layer (3) and connected to the first wiring (4a) through the via hole (11) and a first terminal (7) disposed on the second wiring (4b), wherein the via hole (11) is disposed towards the centre (10) of the surface of the substrate (2) relative to the first electrode (9) and the first terminal (7).</p> |
