发明名称 C粒子が分散したFe−Pt−Ag−C系スパッタリングターゲット及びその製造方法
摘要 An Fe—Pt—Ag—C-based sintered compact sputtering target having a composition represented by a formula (Fe100-X—PtX)100-Y-Z—AgY-CZ (wherein X represents a numerical value satisfying a formula 35≦̸X≦̸55; Y represents a numerical value satisfying a formula 0.5≦̸Y≦̸15; and Z represents a numerical value satisfying a formula 15≦̸Z≦̸55) when expressed in an atomic ratio, and having a relative density of 93% or more. A method for producing an Fe—Pt—Ag—C-based sintered compact sputtering target, characterized in that an Fe—Pt—C sintered compact is produced in advance, the sintered compact is pulverized to produce a pulverized powder, the pulverized powder is mixed with a Ag powder, and the resultant mixed powder is subject to sintering at a temperature lower than a melting point of Ag. An object of this invention is to provide a high-density sputtering target which enables the production of a magnetic thin film having a granular structure without the use of expensive co-sputtering equipment and which enables the reduction in the amount of particles generated during sputtering.
申请公布号 JP5705993(B2) 申请公布日期 2015.04.22
申请号 JP20130533038 申请日期 2013.04.10
申请人 JX日鉱日石金属株式会社 发明人 佐藤 敦;高見 英生
分类号 C23C14/34;G11B5/851 主分类号 C23C14/34
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