| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for forming a gallium nitride columnar structure, by which mixing of a catalyst metal can be suppressed, and to provide an apparatus for forming a gallium nitride columnar structure using the method. <P>SOLUTION: A gallium nitride columnar structure is formed by reactive sputtering on a base layer. In the process, the nitrogen concentration, which is a proportion of a flow volume of nitrogen gas in the total flow volume of argon gas and nitrogen gas supplied into a vacuum vessel 11, is controlled in such a manner that the growth rate of a gallium nitride film is limited by the nitrogen supply and that the growth rate of gallium nitride is 91% or more and 100% or less of the maximum growth rate of gallium nitride. The gallium nitride columnar structure is formed under the conditions that the temperature T of a substrate S and the bias power P at a frequency of 13.56 MHz supplied to a gallium target 14 satisfy 600≤T≤1200, 0<P≤4.63, P<0.0088T-6.60 and P≥0.0116T-11.37. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
