发明名称 |
Junction field effect transistor, and method of manufacture thereof |
摘要 |
A method of forming a junction field effect transistor, the transistor comprising: a back gate; a channel; a top gate; a drain and a source in current flow with the channel; wherein the method comprises selecting a first channel dimension between the top gate and the back gate such that a significant current flow path in the channel occurs in a region of relatively low electric field strength. |
申请公布号 |
EP2863418(A1) |
申请公布日期 |
2015.04.22 |
申请号 |
EP20140188003 |
申请日期 |
2014.10.07 |
申请人 |
ANALOG DEVICES GLOBAL |
发明人 |
COYNE, EDWARD |
分类号 |
H01L21/337;H01L29/08;H01L29/10;H01L29/808 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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