发明名称 High performance diode laser and method of producing the same
摘要 The diode laser has facets arranged opposite together, where the facets are made of amorphous layer systems (26, 28) composed of silicon and carbon. The amorphous layer systems perform a function of a passivation layer (22) and a function of reflection-determining functional layers (24). The amorphous layer systems are deposited by a plasma enhanced chemical vapor deposition process or a thermal chemical vapor deposition process using process gases such as methane and silane. The passivation layer acts as a diffusion barrier. An independent claim is also included for a method of producing a high-power diode laser.
申请公布号 EP2290766(A3) 申请公布日期 2015.04.22
申请号 EP20100173278 申请日期 2010.08.18
申请人 M2K-LASER GMBH 发明人 KELEMEN, MARC;MORITZ, RUDOLF;GILLY, JÜRGEN;FRIEDMANN, PATRICK
分类号 H01S5/028;H01S5/00;H01S5/02 主分类号 H01S5/028
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