发明名称 |
High performance diode laser and method of producing the same |
摘要 |
The diode laser has facets arranged opposite together, where the facets are made of amorphous layer systems (26, 28) composed of silicon and carbon. The amorphous layer systems perform a function of a passivation layer (22) and a function of reflection-determining functional layers (24). The amorphous layer systems are deposited by a plasma enhanced chemical vapor deposition process or a thermal chemical vapor deposition process using process gases such as methane and silane. The passivation layer acts as a diffusion barrier. An independent claim is also included for a method of producing a high-power diode laser. |
申请公布号 |
EP2290766(A3) |
申请公布日期 |
2015.04.22 |
申请号 |
EP20100173278 |
申请日期 |
2010.08.18 |
申请人 |
M2K-LASER GMBH |
发明人 |
KELEMEN, MARC;MORITZ, RUDOLF;GILLY, JÜRGEN;FRIEDMANN, PATRICK |
分类号 |
H01S5/028;H01S5/00;H01S5/02 |
主分类号 |
H01S5/028 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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