| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an SOI wafer having an SOI layer film thickness excellent in in-plane uniformity. <P>SOLUTION: A bonded SOI wafer manufacturing method comprises: bonding a surface of a bond wafer on which an ion implantation layer is formed on the ion implanted side with a surface of a base wafer via an insulation film; subsequently detaching a part of the bond wafer at the ion implantation layer to form a bonded SOI wafer; and subsequently performing planarization. The bonded SOI wafer manufacturing method comprises: performing an RTA treatment on the bonded SOI wafer after the detachment in an atmosphere containing hydrogen gas so as to remove a natural oxide film on a peripheral part of an SOI layer surface and leave a natural oxide film on a central part; and performing the planarization on the bonded SOI wafer on which the natural oxide film is left on the central part such that an in-plane film thickness range of the SOI layer surface becomes 1.5 nm or under. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
