| 摘要 |
<p>A method for manufacturing a MOSFET (100) includes the steps of: forming a gate oxide film (91) on an active layer (7), forming a gate electrode (93) on the gate oxide film (91), forming a source contact electrode (92) in ohmic contact with the active layer (7), and forming an interlayer insulating film (94) made of silicon dioxide so as to cover the gate electrode (93) after the source contact electrode (92) is formed. The step of forming a source contact electrode (92) includes the steps of forming a metal layer including aluminum so as to be in contact with the active layer (7), and alloying the metal layer.</p> |
