| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a bonded wafer including a thin-film layer with high quality and less surface roughness, in which the terrace width is not increased because embrittlement through thermal treatment is enough in a part that is subjected to an external impact and minimal thermal treatment that allows separation is performed on the other separation surface. <P>SOLUTION: A manufacturing method for a bonded wafer includes an ion injection layer formation step, a bonded body formation step, a thermal treatment step, and a separation step. At least in the thermal treatment step, thermal treatment is performed so that temperature distribution is caused at an outer periphery of the bonded body. In the separation step, external impact is given to an edge of the bonded body that exhibits the highest temperature in the temperature distribution, so that the bonded wafer is mechanically separated using the ion injection layer as a boundary to form the thin-film layer. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
