发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME |
摘要 |
<p>An anode region 106 is formed on a bottom portion of a trench 105 in which a gate electrode 108 is formed or in a drift region 102 immediately under the trench 105. A contact hole 110 is formed in the trench 105 at a depth reaching the anode region 106. A source electrode 112 is embedded in the contact hole 110 while interposing an inner wall insulating film 111 therebetween. The anode region 106 and the source electrode 112 are electrically connected to each other in a state of being insulated from the gate electrode 108 by the inner wall insulating film 111.</p> |
申请公布号 |
EP2701201(A4) |
申请公布日期 |
2015.04.22 |
申请号 |
EP20120774352 |
申请日期 |
2012.02.24 |
申请人 |
NISSAN MOTOR CO., LTD |
发明人 |
YAMAGAMI, SHIGEHARU;HAYASHI, TETSUYA;SHIMOMURA, TAKU |
分类号 |
H01L29/78;H01L21/336;H01L29/06;H01L29/165;H01L29/417 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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