| 发明名称 |
PHASE-SHIFT PHOTOMASK AND PATTERNING METHOD |
| 摘要 |
<p>A phase shift photomask blank has a quartz substrate, a lower chrome layer, a light-absorbing MoSi layer, and an upper chrome layer. This mask can be patterned in various ways to form a patterned photomask with both phase shift and binary areas.</p> |
| 申请公布号 |
EP2519963(A4) |
申请公布日期 |
2015.04.22 |
| 申请号 |
EP20100844175 |
申请日期 |
2010.12.08 |
| 申请人 |
INTEL CORPORATION |
发明人 |
OLSON, BENNETT;LAU, MAX;MA, CHENG-HSIN;MA, JIAN;JAMIESON, ANDREW, T. |
| 分类号 |
H01L21/027;G03F1/26;G03F1/29;G03F1/30;G03F1/58 |
主分类号 |
H01L21/027 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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