| 发明名称 | Interconnection structure for semiconductor package | ||
| 摘要 | An interconnection structure for being formed on bonding pads of a substrate in a semiconductor package is provided. The interconnection structure includes a nickel layer formed on each of the bonding pads, a metal layer formed on the nickel layer, and a solder material formed on the metal layer. The metal layer is made of one of gold, silver, lead and copper, and has a thickness in the range of 0.5 to 5 um. As such, when the solder material is reflowed to form solder bumps, no nickel-tin compound is formed between the solder bumps and the metal layer, thereby avoiding cracking or delamination of the solder bumps. | ||
| 申请公布号 | US9013042(B2) | 申请公布日期 | 2015.04.21 |
| 申请号 | US201213677861 | 申请日期 | 2012.11.15 |
| 申请人 | Siliconware Precision Industries Co., Ltd. | 发明人 | Lin Chang-Fu;Tsai Ho-Yi;Yao Chin-Tsai;Ho Jui-Chung;Hung Ching-Hui |
| 分类号 | H01L23/48;H01L23/52;H01L29/40;H01L23/532;H01L23/00 | 主分类号 | H01L23/48 |
| 代理机构 | Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. | 代理人 | Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. ;Corless Peter F.;Jensen Steven M. |
| 主权项 | 1. An interconnection structure for being formed on bonding pads of a substrate in a semiconductor package, comprising: a nickel layer formed on each of the bonding pads; a metal layer formed on the nickel layer, wherein the metal layer is made of one of gold, silver, and lead, and has a thickness in the range of 0.5 to 5 um; and a solder material formed on the metal layer and being free from directly contacting the nickel layer. | ||
| 地址 | Taichung TW | ||