发明名称 Gas sensor and flip-chip method for its manufacture
摘要 A sensor element is described that includes at least one semiconductor component having a gas-sensitive layer which is attached to a substrate by the flip-chip method, the gas-sensitive layer facing the substrate and a supply arrangement being provided to supply a gas to be examined to the gas-sensitive layer. The semiconductor component is enclosed in a casing. Also described is a method for manufacturing the sensor element, in which a semiconductor component having a gas-sensitive layer is attached by the flip-chip method to a substrate in such a way that the gas-sensitive layer faces the substrate. After that, the casing is applied by a plasma sputtering method, in particular an atmospheric plasma sputtering method. Finally, a use of the sensor element in the exhaust system of an internal combustion engine is also described.
申请公布号 US9012962(B2) 申请公布日期 2015.04.21
申请号 US200913002188 申请日期 2009.05.04
申请人 Robert Bosch GmbH 发明人 Henneck Stefan;Schmidt Ralf
分类号 G01N27/403;G01N27/414 主分类号 G01N27/403
代理机构 Kenyon & Kenyon LLP 代理人 Kenyon & Kenyon LLP
主权项 1. A sensor element, comprising: a substrate; at least one semiconductor component having a gas-sensitive layer, wherein the gas-sensitive layer faces the substrate; and a supply arrangement including a porous layer to supply a gas to be examined to the gas-sensitive layer; wherein: the at least one semiconductor component is enclosed in a casing; the porous layer is situated between the at least one semiconductor component and the substrate and at least a portion of the porous layer is in contact with the casing, and an area of the porous layer protrudes out of the casing and the area contacts an area not protruding out of the casing, the entire area protruding from the casing being exposed to the gas.
地址 Stuttgart DE