| 发明名称 | Method of forming semiconductor layer and semiconductor light emitting device | ||
| 摘要 | A method of forming a semiconductor layer is provided. The method includes forming a plurality of nanorods on a substrate and forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods. The nanorods are removed so as to form voids in the lower semiconductor layer, and an upper semiconductor layer is formed on an upper portion of the lower semiconductor layer and the voids. | ||
| 申请公布号 | US9012934(B2) | 申请公布日期 | 2015.04.21 |
| 申请号 | US201314013678 | 申请日期 | 2013.08.29 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Lee Seong Suk;Kim Ok Hyun;Lee Dong Yul;Lee Dong Ju;Lee Jeong Wook;Lee Heon Ho |
| 分类号 | H01L33/00;H01L33/12;H01L33/22 | 主分类号 | H01L33/00 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A method of forming a semiconductor layer, the method including: forming a plurality of nanorods on a substrate; forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods; removing the nanorods so as to form voids in the lower semiconductor layer; and forming an upper semiconductor layer on an upper portion of the lower semiconductor layer and the voids. | ||
| 地址 | Suwon-Si, Gyeonggi-Do KR | ||