Radiation-emitting semiconductor component

摘要

A radiation-emitting semiconductor component includes a light-emitting diode chip with at least two emission regions that can be operated independently of each other and at least two differently designed conversion elements. During operation of the light-emitting diode chips each of the emission regions is provided for generating electromagnetic primary radiation. Each emission region has an emission surface by which at least part of the primary radiation is decoupled from the light-emitting diode chip. The conversion elements are provided for absorbing at least part of the primary radiation and for re-emitting secondary radiation. The differently designed conversion elements are disposed downstream of different emission surfaces. An electric resistance element is connected in series or parallel to at least one of the emission regions.

主权项

1. A radiation-emitting semiconductor component comprising:
a light-emitting diode chip having a plurality of emission regions that can be operated independently of one another, the light emitting diode chip further having a first main area which is a part of an outer area of the light-emitting diode chip, a plurality of differently configured conversion elements, wherein
each of the emission regions is configured to generate electromagnetic primary radiation during operation of the light-emitting diode chip,each emission region has an emission area through which at least part of the primary radiation is coupled out from the light-emitting diode chip,the conversion elements are configured to absorb at least part of the primary radiation to-re-emit secondary radiation,the differently configured conversion elements are disposed downstream of different emission areas, and an electrical resistance element coupled in series or in parallel with at least one of the emission regions; wherein the resistance element comprises a layer located at an outer area of the light-emitting diode chip; and wherein the plurality of conversion elements and the layer of the resistance element are arranged on a same first main area.