Recessed contact to semiconductor nanowires

摘要

A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

主权项

1. A semiconductor nanowire device, comprising:
a plurality of semiconductor nanowires having a bottom surface and a top surface; an insulating material which surrounds the plurality of semiconductor nanowires, wherein the insulating material comprises a plurality of discrete insulating shells, each insulating shell of the plurality of discrete insulating shells surrounds a respective semiconductor nanowire of the plurality of semiconductor nanowires; and an electrode ohmically contacting the top surface of the plurality of semiconductor nanowires, wherein a contact of the electrode to a semiconductor material of the plurality of semiconductor nanowires is dominated by the contact to the top surface of the plurality of semiconductor nanowires, wherein: each insulating shell of the plurality of discrete insulating shells is separated from adjacent insulating shells of the plurality of discrete insulating shells by the electrode; the insulating material extends above the top surface of at least one of the semiconductor nanowires of the plurality of semiconductor nanowires to create a recess between a sidewall of the insulating material and the top surface of the at least one semiconductor nanowire; and the electrode fills the recess and contacts only the top surface of the at least one semiconductor nanowire without contacting a sidewall of the at least one semiconductor nanowire.