发明名称 Light emitting diode having electrode pads
摘要 Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
申请公布号 US9012952(B2) 申请公布日期 2015.04.21
申请号 US201414229672 申请日期 2014.03.28
申请人 Seoul Viosys Co., Ltd. 发明人 Seo Won Cheol;Cho Dae Sung;Ye Kyung Hee;Kim Kyoung Wan;Yoon Yeo Jin
分类号 H01L33/00;H01L33/42;H01L33/38;H01L33/44;H01L33/62;H01L33/08;H01L33/20 主分类号 H01L33/00
代理机构 H.C. Park & Associates, PLC 代理人 H.C. Park & Associates, PLC
主权项 1. A light emitting diode, comprising: a substrate; a first conductivity-type semiconductor layer disposed on the substrate; a second conductivity-type semiconductor layer disposed on the first conductivity-type semiconductor layer; an active layer disposed between the first conductivity-type layer and the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first conductivity-type semiconductor layer; a second electrode pad disposed on the first conductivity-type semiconductor layer; an insulation layer disposed between the first conductivity-type semiconductor layer and the second electrode pad, and electrically insulating the second electrode pad from the first conductivity-type semiconductor layer; and at least one upper extension connected to the second electrode pad and electrically connected to the second conductivity-type semiconductor layer, wherein the first electrode pad and the second electrode pad are diagonally disposed near corners of the substrate and face each other.
地址 Ansan-si KR