Thin film deposition method

摘要

The subject of the invention is a process for obtaining a substrate coated on at least part of its surface with at least one film of oxide of a metal M the physical thickness of which is 30 nm or less, said oxide film not being part of a multilayer comprising at least one silver film, said process comprising the following steps:
at least one intermediate film of a material chosen from the metal M, a nitride of the metal M, a carbide of the metal M and an oxygen-substoichiometric oxide of the metal M is deposited by sputtering, said intermediate film not being deposited above or beneath a titanium-oxide-based film, the physical thickness of said intermediate film being 30 nm or less; andat least part of the surface of said intermediate film is oxidized using a heat treatment, during which said intermediate film is in direct contact with an oxidizing atmosphere, especially air, the temperature of said substrate during said heat treatment not exceeding 150° C.

主权项

1. A process for producing a coated substrate, the process comprising:
(I) depositing, by sputtering, at least one material selected from the group consisting of a metal M, a nitride of the metal M, a carbide of the metal M, and an oxygen-substoichiometric oxide of the metal M on at least part of a surface of a substrate, to obtain an intermediate film having a physical thickness of 30 nm or less on the substrate surface, wherein the intermediate film is not deposited above or beneath a titanium-oxide-based film; and (II) heat treating the intermediate film while directly contacting at least part of a surface of the intermediate film with an oxidizing atmosphere, to obtain oxide film comprising the metal M and having a physical thickness of 30 nm or less on the substrate surface, wherein a temperature of the substrate during the heat treatment does not exceed 150° C., wherein the oxide film is not part of a multilayer comprising a silver film, and wherein the heat treating is carried out with laser radiation and a power per unit area of the laser radiation at the intermediate film is greater than or equal to 20 kW/cm2.