Nonvolatile semiconductor storage device and method of manufacturing the same

摘要

A nonvolatile semiconductor storage device includes a semiconductor substrate; a first insulating film disposed above the semiconductor substrate; a first electrode film disposed above the first insulating film; a second insulating film disposed above the first electrode film; a second electrode film disposed above the second insulating film; a third electrode film filling a first trench and overlying the second electrode film, the first trench having a first width and a first depth and extending through the second electrode film and the second insulating film and into the first electrode film; and a first barrier metal film and a first metal film disposed above the third electrode film; wherein the third electrode film above the second electrode film has a first thickness equal to or less than ½ of the first width of the first trench.

主权项

1. A nonvolatile semiconductor storage device comprising:
a semiconductor substrate; a first insulating film disposed above the semiconductor substrate; a first electrode film disposed above the first insulating film; a second insulating film disposed above the first electrode film; a second electrode film disposed above the second insulating film; a third electrode film filling a first trench and overlying the second electrode film, and the first trench having a first width and a first depth and extending through the second electrode film and the second insulating film and into the first electrode film; and a first barrier metal film and a first metal film formed in the listed sequence above the third electrode film; wherein the third electrode film above the second electrode film has a first thickness equal to or less than ½ of the first width of the first trench.