| 摘要 |
The present invention includes: a first blocking layer on an insulating surface, a lower insulating layer on the insulating surface and the first blocking layer, a first oxide semiconductor layer on the lower insulating layer, a second oxide semiconductor layer on the first oxide semiconductor layer, a source electrode and a drain electrode touching the lateral sides of first oxide semiconductor layer and the second oxide semiconductor layer, a first insulating layer on the source electrode, a second insulating layer on the drain electrode, a second oxide semiconductor layer, a first insulating layer, and a third insulating layer on the second insulating layer, a third oxide semiconductor layer on the third insulating layer, a gate insulating layer on the third oxide semiconductor layer, and a gate electrode which touches the gate insulating layer, and covers the lateral and upper surfaces of the second oxide semiconductor layer by interposing the gate insulating layer. |
