| 摘要 |
The present invention relates to a semiconductor light emitting device comprising: a plurality of semiconductor layers having a first semiconductor layer which has a first conductivity, a second semiconductor layer which has a second conductivity to be different with the first conductivity, and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and generates light through recombination of an electron and a hole; a reflection layer reflecting light from the active layer to a plurality of semiconductor layers, wherein at least one first opening and at least one second opening are formed; a first connection electrode electrically connected with the first semiconductor layer through at least one first opening; a second connection electrode electrically connected with the second semiconductor layer through at least one second opening; a first electrode electrically connected with the first connection electrode and supplying one of either the electron or the hole to the first semiconductor layer; and a second electrode electrically connected with the second connection electrode and supplying one of either the electron or the hole to the second semiconductor layer, wherein at least one of either the first connection electrode or the second connection electrode is formed in a closed loop form on the reflection layer. |
