MoOx based selector element

摘要

In some embodiments, control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The control element can be based on multilayer dielectric stacks. The control element can include a zirconium oxide-molybdenum oxide-zirconium oxide multilayer stack. The control element can be based on multilayer dielectric stacks. The control element can include a molybdenum oxide-zirconium oxide-molybdenum oxide multilayer stack. The zirconium oxide in either of the two configurations can be replaced by at least one of hafnium oxide, aluminum oxide, magnesium oxide, or the lanthanide oxides.

主权项

1. A control element for use in a nonvolatile memory cell, the control element comprising:
a first dielectric layer; a second dielectric layer formed above the first dielectric layer; and a third dielectric layer formed above the second dielectric layer, wherein the first dielectric layer and the third dielectric layer each comprise molybdenum oxide.