Semiconductor device and method of manufacturing the same

摘要

In an n-channel HK/MG transistor including: a gate insulating film made of a first high dielectric film containing La and Hf; and a gate electrode which is formed of a stacked film of a metal film and a polycrystalline Si film and which is formed in an active region in a main surface of a semiconductor substrate and surrounded by an element separation portion formed of an insulating film containing oxygen atoms, a second high dielectric film which contains Hf but whose La content is smaller than a La content of the first high dielectric film is formed below the gate electrode which rides on the element separation portion, instead of the first high dielectric film.

主权项

1. A semiconductor device comprising:
an element separation portion which is formed in a main surface of a semiconductor substrate and which is formed of an insulating film containing oxygen atoms; a first active region of a first conductive type which is formed in a first region of the main surface of the semiconductor substrate and which is surrounded by the element separation portion; a second active region of a second conductive type different from the first conductive type, which is formed in a second region different from the first region of the main surface of the semiconductor substrate and which is surrounded by the element separation portion; a first insulating film which is formed on the first active region and which contains La and Hf; and a second insulating film which is formed on the second active region and which contains Hf but whose La content is lower than a La content of the first insulating film, the element separation portion being interposed between the first active region and the second active region, and the first insulating film and the second insulating film being connected to each other on the element separation portion interposed between the first active region and the second active region, and a shared gate electrode being formed on the first insulating film and the second insulating film, wherein, on the element separation portion interposed between the first active region and the second active region, a length of the first insulating film is shorter than a length of the second insulating film.