Thin film transistor array panel and method for manufacturing the same

摘要

A thin film transistor array panel is disclosed. The thin film transistor array panel may include a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, a data wiring layer disposed on the substrate and including a data line crossing the gate line, a source electrode connected to the data line and a drain electrode facing the source electrode, a polymer layer covering the source electrode and the drain electrode, and a passivation layer disposed on the polymer layer. The data wiring layer may include copper or a copper alloy and the polymer layer may include fluorocarbon.

主权项

1. A thin film transistor array panel, comprising:
a gate line disposed on a substrate, the gate line comprising a gate electrode; a semiconductor layer comprising an oxide semiconductor, the semiconductor layer disposed on the substrate; a data wiring layer disposed on the substrate, the data wiring layer comprising a data line crossing the gate line a source electrode connected to the data line and a drain electrode facing the source electrode; a polymer layer covering the source electrode and the drain electrode; and a passivation layer disposed on the polymer layer, wherein the data wiring layer comprises coppor or a copper alloy, and wherein the polymer layer comprises fluorocarbon.