Vertical memory devices and methods of manufacturing the same

摘要

A vertical memory device includes a channel, a ground selection line (GSL), word lines, a string selection line (SSL), and a contact. The channel includes a vertical portion and a horizontal portion. The vertical portion extends in a first direction substantially perpendicular to a top surface of a substrate, and the horizontal portion is connected to the vertical portion and parallel to the top surface of the substrate. The GSL, the word lines and the SSL are formed on a sidewall of the vertical portion of the channel sequentially in the first direction, and are spaced apart from each other. The contact is on the substrate and electrically connected to the horizontal portion of the channel.

主权项

1. A vertical memory device, comprising:
a channel including a vertical portion and a horizontal portion, the vertical portion extending in a first direction substantially perpendicular to a top surface of a substrate, the horizontal portion connected to the vertical portion and parallel to the top surface of the substrate; a ground selection line (GSL), word lines and a string selection line (SSL) on a sidewall of the vertical portion of the channel in the first direction, the GSL, the word lines and the SSL being spaced apart from each other; a contact on the substrate, the contact electrically connected to the horizontal portion of the channel; and a tunnel insulation layer pattern, a charge trapping layer pattern and a blocking layer pattern on and surrounding the channel.