Photo detector and methods of manufacturing and operating same

摘要

A photo detector comprising a first doped impurity region (adapted to receive a first voltage) disposed in or on a substrate; a body region, juxtaposed the first doped impurity region; a gate (adapted to receive a second voltage) spaced from a first portion of the body region; a light absorbing region, juxtaposed a second portion of the body region, includes a material which, in response to light incident thereon, generates carrier pairs including a first and second type carriers; a contact region (adapted to receive a third voltage) juxtaposed the light absorbing region; wherein, in response to incident light, the gate attracts first type carriers of the carrier pairs to the first portion of the body region which causes second carriers from the first doped impurity region to flow to the contact region, and the contact region attracts second type carriers.

主权项

1. A monolithic photo detector disposed in a substrate, the monolithic photo detector comprising:
a doped impurity region disposed in the substrate or on a major surface of the substrate, wherein the doped impurity region is configured to receive a first voltage; a gate disposed over and spaced from the major surface of the substrate with an insulator and laterally disposed apart from and on a first side of the doped impurity region, wherein the gate is configured to receive a second voltage; a contact region, disposed in the substrate or on the major surface of the substrate and laterally disposed apart from and on the first side of the doped impurity region further removed from the first side of the doped impurity region than the gate, wherein the contact region is configured to receive a third voltage; and a light absorbing region disposed in the substrate or on the major surface of the substrate and laterally disposed apart from and on the first side of the doped impurity region between the gate and the contact region, wherein the light absorbing region includes at least one material in which, in response to light incident thereon, carrier pairs of opposite charge are generated, each carrier pair including a first type carrier and a second type carrier; wherein, in response to light incident on the light absorbing region,
the gate attracts first type carriers of the carrier pairs which, in response, causes second type carriers from the doped impurity region to flow through the light absorbing region to the contact region, andthe contact region attracts second type carriers of the carrier pairs.