Semiconductor light-emitting devices including contact layers to form reflective electrodes

摘要

A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.

主权项

1. A semiconductor light-emitting device comprising:
an n-type nitride semiconductor layer; an active layer disposed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer disposed on the active layer; a contact layer that is disposed on the p-type nitride semiconductor layer and has a composition ratio of aluminum (Al) elements that is variable along a thickness direction; and a reflective electrode disposed on the contact layer, wherein the contact layer comprises first, second, and third regions that are sequentially disposed along the thickness direction from the p-type nitride semiconductor layer to the reflective electrode, and wherein the first and third regions include Al elements and the second region does not include Al elements.