发明名称 |
Graphene nanomesh and method of making the same |
摘要 |
A graphene nanomesh includes a sheet of graphene having a plurality of periodically arranged apertures, wherein the plurality of apertures have a substantially uniform periodicity and substantially uniform neck width. The graphene nanomesh can open up a large band gap in a sheet of graphene to create a semiconducting thin film. The periodicity and neck width of the apertures formed in the graphene nanomesh may be tuned to alter the electrical properties of the graphene nanomesh. The graphene nanomesh is prepared with block copolymer lithography. Graphene nanomesh field-effect transistors (FETs) can support currents nearly 100 times greater than individual graphene nanoribbon devices and the on-off ratio, which is comparable with values achieved in nanoribbon devices, can be tuned by varying the neck width. The graphene nanomesh may also be incorporated into FET-type sensor devices. |
申请公布号 |
US9012882(B2) |
申请公布日期 |
2015.04.21 |
申请号 |
US201113576519 |
申请日期 |
2011.01.28 |
申请人 |
The Regents of the University of California |
发明人 |
Duan Xiangfeng;Huang Yu;Bai Jingwei |
分类号 |
H01L21/02;H01L29/66;H01L29/786;B82Y30/00;B82Y40/00;C01B31/04;G01N27/414 |
主分类号 |
H01L21/02 |
代理机构 |
Vista IP Law Group LLP |
代理人 |
Vista IP Law Group LLP |
主权项 |
1. A graphene nanomesh comprising:
a sheet of graphene having a plurality of periodically arranged, cylindrically-shaped apertures, wherein the plurality of apertures have a substantially uniform periodicity and substantially uniform neck width. |
地址 |
Oakland CA US |