发明名称 Method for forming patterned doping regions
摘要 A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.
申请公布号 US9012314(B2) 申请公布日期 2015.04.21
申请号 US201213710795 申请日期 2012.12.11
申请人 Industrial Technology Research Institute 发明人 Sun Wen-Ching;Yu Sheng-Min;Wang Tai-Jui;Lin Tzer-Shen
分类号 H01L21/22;H01L21/38;H01L21/225;H01L31/068;H01L31/18 主分类号 H01L21/22
代理机构 Muncy, Geissler, Olds & Lowe, P.C. 代理人 Muncy, Geissler, Olds & Lowe, P.C.
主权项 1. A method for forming doping regions, comprising: providing a substrate; forming a first-type doping material on the substrate, wherein the step of forming the first-type doping material on the substrate comprises providing a first mask comprising a first opening on the substrate, coating the first-type doping material on the mask and filling the first opening, performing a thermal process to convert the first-type doping material to a colloidal-state or solid-state compound, and removing the first mask; forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap, wherein the step of forming the second-type doping material on the substrate comprises providing a second mask comprising a second opening on the substrate, coating the second-type doping material on the mask and filling the second opening, performing a thermal process to convert the second-type doping material to a colloidal-state or solid-state compound, and removing the second mask; forming a covering layer to cover the substrate, the first-type doping material, and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.
地址 Hsinchu TW