发明名称 |
Method for forming patterned doping regions |
摘要 |
A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate. |
申请公布号 |
US9012314(B2) |
申请公布日期 |
2015.04.21 |
申请号 |
US201213710795 |
申请日期 |
2012.12.11 |
申请人 |
Industrial Technology Research Institute |
发明人 |
Sun Wen-Ching;Yu Sheng-Min;Wang Tai-Jui;Lin Tzer-Shen |
分类号 |
H01L21/22;H01L21/38;H01L21/225;H01L31/068;H01L31/18 |
主分类号 |
H01L21/22 |
代理机构 |
Muncy, Geissler, Olds & Lowe, P.C. |
代理人 |
Muncy, Geissler, Olds & Lowe, P.C. |
主权项 |
1. A method for forming doping regions, comprising:
providing a substrate; forming a first-type doping material on the substrate, wherein the step of forming the first-type doping material on the substrate comprises providing a first mask comprising a first opening on the substrate, coating the first-type doping material on the mask and filling the first opening, performing a thermal process to convert the first-type doping material to a colloidal-state or solid-state compound, and removing the first mask; forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap, wherein the step of forming the second-type doping material on the substrate comprises providing a second mask comprising a second opening on the substrate, coating the second-type doping material on the mask and filling the second opening, performing a thermal process to convert the second-type doping material to a colloidal-state or solid-state compound, and removing the second mask; forming a covering layer to cover the substrate, the first-type doping material, and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate. |
地址 |
Hsinchu TW |