Compressive polycrystalline silicon film and method of manufacture thereof

摘要

In one embodiment a method of forming a compressive polycrystalline semiconductive material layer is disclosed. The method comprises forming a polycrystalline semiconductive seed layer over a substrate and forming a silicon layer by depositing silicon directly on the polycrystalline silicon seed layer under amorphous process conditions at a temperature below 600 C.

主权项

1. A method of forming a stacked capacitor, the method comprises
forming a first plate over a substrate forming a dielectric over a portion of the first plate; and forming a second plate over the dielectric, wherein the second plate is formed by
forming a tensile polycrystalline silicon seed layer over the dielectric, wherein forming the tensile polycrystalline silicon seed layer comprises depositing an amorphous silicon seed layer and annealing the amorphous silicon seed layer over its crystallization temperature, andafter annealing the amorphous silicon seed layer to form the tensile polycrystalline silicon seed layer, forming a compressive polycrystalline silicon layer directly on the polycrystalline silicon seed layer by depositing silicon at a temperature below 600° C.