| 主权项 |
1. A method of manufacturing a non-volatile memory device, comprising steps of:
forming a first electrode on a substrate; forming an interlayer insulating layer on the first electrode; forming a memory cell hole in the interlayer insulating layer such that the memory cell hole penetrates the interlayer insulating layer and exposes the first electrode; forming a first variable resistance layer inside of the memory cell hole; and forming a second variable resistance layer after the step of forming the first variable resistance layer inside of the memory cell hole; and forming a second electrode on the second variable resistance layer, wherein: the first variable resistance layer comprises a first transition metal oxide and the second variable resistance layer comprises a second transition metal oxide, the second transition metal oxide being an oxygen-deficient transition metal oxide, each of the step of forming the first variable resistance layer and the step of forming the second variable resistance layer includes performing a cycle once or plural times, the cycle including:
a first step of introducing a source gas composed of molecules containing atoms of a transition metal;a second step of removing the source gas after the first step;a third step of introducing a reactive gas to form a transition metal oxide after the second step; anda fourth step of removing the reactive gas after the third step; the step of forming the first variable resistance layer is performed in a state in which the substrate is kept at a temperature at which a self-decomposition reaction of the source gas does not occur and such that the first variable resistance layer is formed to conformally cover a bottom portion and a side wall of the memory cell hole, the first variable resistance layer and the second variable resistance layer are formed in such a manner that at least one condition used for forming the first variable resistance layer and the second variable resistance layer is different such that the second variable resistance layer is oxygen-deficient and an oxygen content of the first variable resistance layer is higher than an oxygen content of the second variable resistance layer, the at least one condition being selected from the group consisting of a temperature of the substrate, an amount of the introduced source gas and an amount of the introduced reactive gas, the step of forming the first variable resistance layer includes performing a first cycle once or plural times, the first cycle including:
A1 step of introducing the source gas to form a mono-molecular layer on the substrate;A2 step of removing the source gas after the A1 step;A3 step of introducing the reactive gas such that a layer is deposited in a reaction-limited state of the reactive gas, to form the first transition metal oxide which is not oxygen-deficient, after the A2 step; andA4 step of removing the reactive gas after the A3 step, the step of forming the second variable resistance layer is performed in a state in which the substrate is kept at a temperature at which the self-decomposition reaction of the source gas occurs, and includes performing a second cycle once or plural times, the second cycle including:
B1 step of introducing the source gas to form a plurality of atomic layers of the transition metal on the substrate by the self-decomposition reaction;B2 step of removing the source gas after the B1 step;B3 step of introducing the reactive gas such that a layer is deposited in a supply-limited state of the reactive gas, to form the second transition metal oxide which is oxygen-deficient, after the B2 step; andB4 step of removing the reactive gas after the B3 step, the A1, A2, A3 and A4 steps are the first, second, third and fourth steps included in the step of forming the first variable resistance layer, respectively, and the B1, B2, B3 and B4 steps are the first, second, third and fourth steps included in the step of forming the second variable resistance layer, respectively. |
