发明名称 |
Sandwich damascene resistor |
摘要 |
A method is provided for forming sandwich damascene resistors in MOL processes and the resulting devices. Embodiments include forming on a substrate a film stack including an interlayer dielectric (ILD), a first dielectric layer, and a sacrifice layer (SL); removing a portion of the SL and the first dielectric layer, forming a first cavity; conformally forming a layer of resistive material in the first cavity and over the SL; depositing a second dielectric layer over the layer of resistive material and filling the first cavity; and removing the second dielectric layer, the layer of resistive material not in the first cavity, and at least a partial depth of the SL. |
申请公布号 |
US9012293(B2) |
申请公布日期 |
2015.04.21 |
申请号 |
US201313738604 |
申请日期 |
2013.01.10 |
申请人 |
GLOBALFOUNDRIES Singapore Pte. Ltd. |
发明人 |
Xiao Chang Yong;Miller Roderick;Chen Jie |
分类号 |
H01L21/20;H01L21/76;H01L27/11;H01L29/00;H01L49/02;H01L23/522 |
主分类号 |
H01L21/20 |
代理机构 |
Ditthavong & Steiner, P.C. |
代理人 |
Ditthavong & Steiner, P.C. |
主权项 |
1. A method comprising:
forming on a substrate a film stack including an interlayer dielectric (ILD), a first dielectric layer, and a sacrifice layer (SL); removing the entire length of the SL and the first dielectric layer, forming a first cavity; conformally forming a layer of resistive material in the first cavity and over the SL; depositing a second dielectric layer over the layer of resistive material and filling the first cavity; removing the second dielectric layer, the layer of resistive material not in the first cavity, and at least a partial depth of the SL; forming a second SL over the first dielectric layer, subsequent to removing the first SL; removing a portion of the second SL and the first dielectric layer, forming a second cavity; conformally forming a layer of second resistive material in the second cavity and over the second SL; depositing a third dielectric layer over the layer of second resistive material and filling the second cavity; and removing the third dielectric layer and the layer of second resistive material not in the second cavity and the second SL. |
地址 |
Singapore SG |