Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods

摘要

Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and/or growing the crystals having the selected orientation.

主权项

1. A method of making a solid state lighting (“SSL”) device substrate, the method comprising:
forming a region of silicon over a support substrate, the region of silicon including first crystals having a (111) crystal orientation and second crystals not having the (111) crystal orientation; etching the region of silicon to preferentially remove material from the second crystals relative to material from the first crystals; forming additional silicon over the region of silicon after etching the region of silicon; and forming gallium nitride over the region of silicon after forming the additional silicon, the gallium nitride forming with a (0001) crystal orientation.