发明名称 Semiconductor device manufacturing method and semiconductor device
摘要 A semiconductor device manufacturing method includes sealing a first surface of a semiconductor wafer with a resin, causing a resin-made warp suppression member to be adhered to a second surface on the opposite side of the first surface of the semiconductor wafer and causing the warp suppression member to shrink, measuring the amount of warp of the semiconductor wafer, and forming cuts in the warp suppression member in accordance with the amount of warp of the semiconductor wafer.
申请公布号 US9013048(B2) 申请公布日期 2015.04.21
申请号 US201414193128 申请日期 2014.02.28
申请人 Fujitsu Limited 发明人 Kainuma Norio
分类号 H01L21/66;H01L23/31 主分类号 H01L21/66
代理机构 Squire Patton Boggs (US) LLP 代理人 Squire Patton Boggs (US) LLP
主权项 1. A semiconductor device manufacturing method comprising: sealing a first surface of a semiconductor wafer with a resin; causing a resin-made warp suppression member to be adhered to a second surface on the opposite side of the first surface of the semiconductor wafer, and causing the warp suppression member to shrink; measuring the amount of warp of the semiconductor wafer; and forming cuts in the warp suppression member in accordance with the amount of warp of the semiconductor wafer.
地址 Kawasaki JP