Semiconductor light emitting device and method for manufacturing same

摘要

According to one embodiment, a semiconductor light emitting device includes a plurality of chips, and a phosphor layer. Each of the plurality of chips includes a semiconductor layer, a p-side electrode, and an n-side electrode. The semiconductor layer has a first surface, a second surface opposite to the first surface, and a light emitting layer. The p-side electrode is provided in an emitting region on the second surface. The n-side electrode is provided in an non-emitting region on the second surface. The phosphor layer is provided on the first surface side of the chips. The phosphor layer includes a transparent body and a phosphor dispersed in the transparent body. A gap not including the phosphor is provided in the phosphor layer. The plurality of chips includes a plurality of chips for which the gap has different sizes.

主权项

1. A semiconductor light emitting device, comprising:
a plurality of chips, wherein each of the plurality of chips includes a semiconductor layer, a p-side electrode, and an n-side electrode, wherein the semiconductor layer has a first surface, a second surface opposite to the first surface, and a light emitting layer, and wherein the p-side electrode is provided in an emitting region on the semiconductor layer, and the n-side electrode is provided in a non-emitting region on the semiconductor layer; a phosphor layer provided on a side of the first surface of the semiconductor layer of each of the plurality of chips, wherein the phosphor layer includes a first transparent body, a phosphor dispersed in the first transparent body, and a gap which does not include the phosphor, wherein the gap seperates a top face of the phosphor layer; and a transparent resin provided in the gap.