Thin-film transistor and method for manufacturing thin-film transistor

摘要

A method for manufacturing a thin-film transistor includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating layer above the gate electrode; forming a semiconductor film above the gate insulating layer; forming, above the semiconductor film, a protective layer comprising an organic material; forming a source electrode and a drain electrode which are opposed to each other and each of which has at least a portion located above the protective layer; forming a semiconductor layer patterned, by performing dry etching on the semiconductor film; and performing, in a hydrogen atmosphere, plasma treatment on an altered layer which (i) is a surface layer of the protective layer exposed from the source electrode and the drain electrode and altered by the dry etching, and (ii) has at least a portion contacting a surface of the semiconductor layer.

主权项

1. A thin-film transistor, comprising:
a gate electrode above a substrate; a gate insulating layer above the gate electrode; a semiconductor layer that is opposed to the gate electrode with the gate insulating layer therebetween; an etch-stopper layer above the semiconductor layer and comprising an organic material; and a source electrode and a drain electrode that are opposed to each other, each of the source electrode and the drain electrode having at least a portion located above the etch-stopper layer, wherein the etch-stopper layer includes a modified layer in a region which (i) is in a surface of the etch-stopper layer exposed from the source electrode and the drain electrode and (ii) has at least a portion contacting a surface of the semiconductor layer, the modified layer being an altered layer that has been modified, the altered layer being generated by alteration of a material of the etch-stopper layer, and wherein the modified layer has a chlorine concentration which is at least ten times higher than a chlorine concentration of the etch-stopper layer.