Semiconductor light emitting device

摘要

According to one embodiment, a semiconductor light emitting device includes: a first semiconductor layer; a second semiconductor layer; and a light emitting layer provided between the first and the second semiconductor layers. The first semiconductor layer includes a nitride semiconductor, and is of an n-type. The second semiconductor layer includes a nitride semiconductor, and is of a p-type. The light emitting layer includes: a first well layer; a second well layer provided between the first well layer and the second semiconductor layer; a first barrier layer provided between the first and the second well layers; and a first Al containing layer contacting the second well layer between the first barrier layer and the second well layer and containing layer containing Alx1Ga1-x1N (0.1≦x1≦0.35).

主权项

1. A semiconductor light emitting device comprising:
a first semiconductor layer including a nitride semiconductor, the first semiconductor layer being of an n-type; a second semiconductor layer including a nitride semiconductor, the second semiconductor layer being of a p-type; and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the light emitting layer including:
a first well layer including a nitride semiconductor;a second well layer provided between the first well layer and the second semiconductor layer and including a nitride semiconductor;a first barrier layer provided between the first well layer and the second well layer and including a nitride semiconductor, the first barrier layer directly contacting the first well layer, a band gap energy of the first barrier layer being greater than a band gap energy of the first well layer and a band gap energy of the second well layer; anda first Al containing layer provided between the first barrier layer and the second well layer, the first Al containing layer directly contacting the first barrier layer and the second well layer, and the first Al containing layer containing Alx1Ga1-x1N (0.1≦x1≦0.35), wherein the first barrier layer includes a first n-side layer and a first p-side layer provided between the first n-side layer and the first Al containing layer, and an Al composition ratio of the first p-side layer is less than an Al composition ratio of the first Al containing layer.