| 主权项 |
1. A method for chemical mechanical polishing of a substrate, comprising:
providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing composition, comprising, as initial components:
water,0.1 to 40 wt % of a colloidal silica abrasive;0.001 to 5 wt % of an additive according to formula I: wherein R1 is a C1-8 alkyl group; wherein R2, R3, R4, R5, R6 are each independently selected from a hydrogen, a halogen, a hydroxyl group and a C1-8 alkyl group; wherein the chemical mechanical polishing composition contains <0.00000000001 wt % of an inclusion compound; and, wherein the chemical mechanical polishing composition contains <0.00000000001 wt % of an oxidizer; providing a chemical mechanical polishing pad with a polishing surface; dispensing the chemical mechanical polishing composition onto the polishing surface of the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; and, creating dynamic contact at the interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; wherein the substrate is polished; wherein some of the silicon oxide is removed from the substrate. |
