Memory with redundant sense amplifier

摘要

Embodiments of a memory are disclosed that may reduce the likelihood of a miss-read while reading a weak data storage cell. The memory may include a number of data storage cells, a column multiplexer, a first sense amplifier and a second sense amplifier, and an output circuit. The gain level of the first sense amplifier may be higher than the gain level of the second sense amplifier. The output circuit may include a multiplexer and the multiplexer may be operable to controllably select one of the outputs of the first and second sense amplifiers and pass the value of the selected sense amplifier. The output circuit may include a node that couples the outputs of the first and second sense amplifiers and the outputs of the first and second sense amplifiers may be able to be set to a high impedance state.

主权项

1. An apparatus, comprising:
a plurality of data storage cells; a decoder circuit configured to select a given one of the plurality of data storage cells; a first sense amplifier configured to amplify data stored in the given one of the plurality of data storage cells using a first gain level in response to a determination that the given one of the plurality of data storage cells is not a weak data storage cell; and a second sense amplifier configured to amplify data stored in the given one of the plurality of data storage cells using a second gain level in response to a determination that the given one of the plurality of data storage cells is a weak data storage cell, wherein the second gain level is greater than the first gain level.