Semiconductor device and method for manufacturing semiconductor device

摘要

Provided is a fin-type transistor having an oxide semiconductor in a channel formation region in which the channel formation region comprising an oxide semiconductor is three-dimensionally structured and a gate electrode is arranged to extend over the channel formation region. Specifically, the fin-type transistor comprises: an insulator protruding from a substrate plane; an oxide semiconductor film extending beyond the insulator; a gate insulating film over the oxide semiconductor film; and a gate electrode over and extending beyond the oxide semiconductor film. This structure allows the expansion of the width of the channel formation region, which enables the miniaturization and high integration of a semiconductor device having the transistor. Additionally, the extremely small off-state current of the transistor contributes to the formation of a semiconductor device with significantly reduced power consumption.

主权项

1. A semiconductor device comprising:
an insulator over and in contact with a part of an insulating surface; an oxide semiconductor film over the insulator; a gate insulating film over and in contact with the oxide semiconductor film and the insulating surface; and a gate electrode over and in contact with the gate insulating film, wherein the oxide semiconductor film extends beyond the insulator in a direction perpendicular to a channel length direction so that the oxide semiconductor film is in contact with a top surface of the insulator, a side surface of the insulator, and the insulating surface.