Semiconductor die singulation method

摘要

In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer.

主权项

1. A method of singulating semiconductor die from a semiconductor wafer comprising:
providing the semiconductor wafer formed from a semiconductor material and having a plurality of semiconductor dies formed on a first surface of the semiconductor wafer, the plurality of semiconductor dies separated from each other by singulation regions where singulation openings are to be formed wherein the plurality of semiconductor dies include a dielectric layer overlying portions of the plurality of semiconductor dies, the semiconductor wafer including a second surface that is opposite to the first surface; providing a conductor on the second surface of the semiconductor wafer, the conductor having a thickness; attaching the semiconductor wafer to a first carrier tape wherein the conductor overlies the carrier tape; etching a first opening to extend into the semiconductor wafer thereby creating a space between the plurality of semiconductor dies wherein the carrier tape remains attached during the etching; applying a second carrier tape to the first surface of the semiconductor wafer; and reducing the thickness of portions of the conductor to form a reduced thickness region of the conductor after forming the space between the plurality of semiconductor dies.