Method for conformal treatment of dielectric films using inductively coupled plasma

摘要

Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer.

主权项

1. A method of forming a film, the method comprising:
placing a substrate on a substrate support of a processing chamber, the substrate having a first layer thereon comprising a structure including at least one sidewall, the substrate having a film comprising an oxide deposited on the at least one sidewall of the structure; and exposing the film to an inductively coupled plasma formed from a process gas comprising one or more of oxygen and an oxygen-containing gas and oxygen-inert gas mixture to form a substantially conformal film.