Test piece and manufacturing method thereof

摘要

Disclosed are a test piece and the manufacturing method thereof The test piece includes an insulating substrate and a circuit pattern structure formed on the insulating substrate, wherein circuit pattern structure includes a first metal pattern layer, a second metal pattern layer, a third metal pattern layer, a fourth metal pattern layer, and a fifth metal pattern layer. The first metal pattern layer, the second metal pattern layer, the third metal pattern layer, the fourth metal pattern layer, and the fifth metal pattern layer have same pattern shapes and positions thereof are overlapping in a plane. The first metal pattern layer and the second metal pattern layer are nano-metal films formed by vacuum coating, therefore, the test piece has excellent uniformity of film and low resistance to provide a stable test current to prevent the judging mistakes and to improve the test efficiency.

主权项

1. A manufacturing method of a test piece, comprising:
a first vacuum coating step for firming a first metal film on an insulating substrate by evaporation, sputtering, or atomic layer deposition (ALD); a second vacuum coating step for forming a second metal film on the first metal film by evaporation, sputtering, or ALD; a photolithography step for forming a photoresist pattern layer on the second metal film; a first etching step for removing parts of the second metal film which are uncovered by the photoresist pattern layer by using a first etchant to form a second metal pattern layer; a second etching step for removing parts of the first metal film which are uncovered by the photoresist pattern layer and the second metal pattern layer by using a second etchant to form a first metal pattern layer; after said second etching step, immersing the structure with the first metal pattern layer, the second metal pattern layer and the photoresist pattern layer on the insulating substrate in a neutralizing agent, wherein the neutra1izing agent includes a third oxidizing agent including at least one of sulfur acid, oxalic acid, lactic acid and hydrogen peroxide, and a reducing agent icluding hydrazine, tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO), and tetrahydrofuran (THF); a photoresist removing step, performed after said immersing, for removing the photoresist pattern layer; and a chemical build-up step for forming a third metal pattern layer, a fourth metal pattern layer, and a fifth metal pattern layer on the second metal pattern layer in sequence by electroplating or electroless plating, wherein the first metal pattern layer, the second metal pattern layer, the third metal pattern layer, the fourth metal pattern layer, and the fifth metal pattern layer have same pattern shapes and positions thereof overlap in a plane, the first etchant does not react to the first metal film, and the second etchant does not react to the second metal pattern layer.