| 发明名称 | Photoelectric element having stacked charge-transport layers | ||
| 摘要 | A photoelectric element includes a first electrode; and a second electrode positioned so as to face the first electrode; and a semiconductor disposed on a face of the first electrode, the face being positioned so as to face the second electrode; and a photosensitizer carried on the semiconductor; and a first charge-transport layer interposed between the first electrode and the second electrode; and a second charge-transport layer interposed between the first charge-transport layer and the second electrode. The first charge-transport layer and the second charge-transport layer contain different oxidation-reduction materials. The oxidation-reduction material in the first charge-transport layer has an oxidation-reduction potential higher than an oxidation-reduction potential of the oxidation-reduction material in the second charge-transport layer. | ||
| 申请公布号 | US9013023(B2) | 申请公布日期 | 2015.04.21 |
| 申请号 | US201214114490 | 申请日期 | 2012.12.18 |
| 申请人 | Panasonic Corporation;Waseda University | 发明人 | Suzuka Michio;Sekiguchi Takashi;Hayashi Naoki;Nishide Hiroyuki;Oyaizu Kenichi;Kato Fumiaki |
| 分类号 | H01L31/06;H01G9/20;H01L51/50 | 主分类号 | H01L31/06 |
| 代理机构 | Renner, Otto, Boisselle & Sklar, LLP | 代理人 | Renner, Otto, Boisselle & Sklar, LLP |
| 主权项 | 1. A photoelectric element comprising: a first electrode; a second electrode positioned so as to face the first electrode; a semiconductor disposed on a face of the first electrode, the face being positioned so as to face the second electrode; a photosensitizer carried on the semiconductor; a first charge-transport layer located between the first electrode and the second electrode; and a second charge-transport layer located between the first charge-transport layer and the second electrode, wherein: the first charge-transport layer and the second charge-transport layer contain different oxidation-reduction materials; and the oxidation-reduction material in the first charge-transport layer has an oxidation-reduction potential higher than an oxidation-reduction potential of the oxidation-reduction material in the second charge-transport layer. | ||
| 地址 | Osaka JP | ||