Field effect transistor and manufacturing method thereof

摘要

A field effect transistor (FET) and a manufacturing method thereof are provided. The FET includes a substrate, a fin bump, an insulating layer, a charge trapping structure and a gate structure. The fin bump is disposed on the substrate. The insulating layer is disposed on the substrate and located at two sides of the fin bump. The charge trapping structure is disposed on the insulating layer and located at at least one side of the fin bump. A cross-section of the charge trapping structure is L-shaped. The gate structure covers the fin bump and the charge trapping structure.

主权项

1. A field effect transistor, comprising:
a substrate; a fin bump disposed on the substrate; an insulating layer disposed on the substrate and located at two sides of the fin bump; a charge trapping structure disposed on the insulating layer and located at least one side of the fin bump, wherein a cross-section of the charge trapping structure is L-shaped, and the charge trapping structure covers part of the lateral wall of the fin bump; and a gate structure covering the fin bump and the charge trapping structure; wherein a top of the charge trapping structure is lower than a top of the fin bump and higher than a bottom of the fin bump.