Capacitor using middle of line (MOL) conductive layers

摘要

A method for fabricating a metal-insulator-metal (MIM) capacito includes depositing a first middle of line (MOL) conductive layer over a shallow trench isolation (STI) region of a semiconductor substrate. The first MOL conductive layer provides a first plate of the MIM capacitor as well as a first set of local interconnects to source and drain regions of a semiconductor device. The method also includes depositing an insulator layer on the first MOL conductive layer as a dielectric layer of the MIM capacitor. The method further includes depositing a second MOL conductive layer on the insulator layer as a second plate of the MIM capacitor.

主权项

1. A device, comprising:
a semiconductor substrate; a first middle of line (MOL) conductive layer, comprising a first capacitor plate on the semiconductor substrate and covering at least a portion of a shallow trench isolation region in the semiconductor substrate; an insulator layer including a first portion on the first capacitor plate and a second portion on a first surface of each of a first set of local conductive interconnects to source and drain regions of the device, in which the first and second portions of the insulator layer are on a same layer and the insulator layer having a surface coplanar with a second surface of each of the first set of local conductive interconnects; a second MOL conductive layer, comprising a second capacitor plate on the insulator layer; a first interconnect coupled to the first capacitor plate; and a second interconnect coupled to the second capacitor plate.