Light emitting device, light emitting device package and illumination system for reducing dislocation in semiconductor layer

摘要

A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer.

主权项

1. A light emitting device, comprising:
a first semiconductor layer; a plurality of convex structures disposed on a top surface of the first semiconductor layer; a first uneven layer on a top surface of the plurality of convex structures; a nonconductive layer between the top surface of the plurality of convex structures and the first uneven layer; and a light emitting structure layer disposed on a top surface of the first uneven layer, the light emitting structure layer including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer on the active layer, wherein the nonconductive layer includes a contact portion contacted directly with the top surface of the plurality of convex structures, wherein the nonconductive layer is formed of a different material from the plurality of convex structures and the first uneven layer, wherein the first uneven layer is formed of a different material from the plurality of convex structures, wherein the plurality of convex structures are disposed in a discontinuous structure on the top surface of the first semiconductor layer, and wherein the nonconductive layer includes at least one selected from a group of MgN, SiN, and ZnN.