发明名称 Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
摘要 A method for manufacturing vertically structured Group III nitride semiconductor LED chips includes a step of forming a light emitting laminate on a growth substrate; a step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a conductive support on the plurality of light emitting structures; a step of lifting off the growth substrate from the plurality of light emitting structures; and a step of cutting the conductive support thereby singulating a plurality of LED chips each having the light emitting structure. The step of partially removing the light emitting laminate is performed such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon (“n” is a positive integer) having rounded corners.
申请公布号 US9012935(B2) 申请公布日期 2015.04.21
申请号 US201314017889 申请日期 2013.09.04
申请人 Wavesquare Inc.;Dowa Electronics Materials Co., Ltd. 发明人 Cho Meoung Whan;Lee Seog Woo;Jang Pil Guk;Toba Ryuichi;Toyota Tatsunori;Kadowaki Yoshitaka
分类号 H01L33/32;H01L33/00;H01L33/62 主分类号 H01L33/32
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A vertically structured Group III nitride semiconductor LED chip comprising: a conductive support portion which also serves as a lower electrode; a connection layer provided on the conductive support portion; and a light emitting structure including a second conductivity type Group III nitride semiconductor layer provided on the connection layer, a light emitting layer provided on the second conductivity type Group III nitride semiconductor layer, and a first conductivity type Group III nitride semiconductor layer provided on the light emitting layer, the first conductivity type being different from the second conductivity type, wherein: the conductive support portion and the light emitting structure are sandwiched between a pair of electrodes, the light emitting structure has a top view shape of a circle or a 4n-gon (“n” is a positive integer) having rounded corners, the conductive support portion has a top view larger than and different shape from that of the light emitting structure, a length of a straight portion in one side of the 4n-gon having rounded corners: L1 satisfies the following formula: L1<L0.80, and L0 is a length of one side of the 4n-gon with the corners not being rounded.
地址 Yongin KR